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CHM2316QGP MOSFET Transistor

The CHM2316QGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM2316QGP transistor as follows.

Circuit diagram symbol of the CHM2316QGP transistor

CHM2316QGP Transistor Specification

Transistor Code CHM2316QGP
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-457
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.034Ohm
Power Dissipation (Maximum) PD 2W
Operating Junction Temperature (Maximum) 150°C
Rise Time 3nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 12.3nC

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