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CHM2313QGP MOSFET Transistor

The CHM2313QGP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM2313QGP transistor as follows.

Circuit diagram symbol of the CHM2313QGP transistor

CHM2313QGP Transistor Specification

Transistor Code CHM2313QGP
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-457
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 2W
Operating Junction Temperature (Maximum) 150°C
Rise Time 6nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 17nC

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