CHM2308ESGP MOSFET Transistor

The CHM2308ESGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM2308ESGP transistor as follows.

CHM2308ESGP Transistor Specification

Transistor Code		CHM2308ESGP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-346
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	1.25W
Operating Junction Temperature (Maximum)		150°C
Rise Time		0.87nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		4.3nC

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