CHM12P10NGP MOSFET Transistor

The CHM12P10NGP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM12P10NGP transistor as follows.

CHM12P10NGP Transistor Specification

Transistor Code		CHM12P10NGP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.315Ohm
Power Dissipation (Maximum)	PD	75W
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		15.6nC

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