CHM1013TGP MOSFET Transistor

The CHM1013TGP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM1013TGP transistor as follows.

CHM1013TGP Transistor Specification

Transistor Code		CHM1013TGP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-416
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.52Ohm
Power Dissipation (Maximum)	PD	0.27W
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		0.8V
Total Gate Charge		1.5nC

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