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CHM1012TGP MOSFET Transistor

The CHM1012TGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM1012TGP transistor as follows.

Circuit diagram symbol of the CHM1012TGP transistor

CHM1012TGP Transistor Specification

Transistor Code CHM1012TGP
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-416
Transistor SMD Code X
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 0.65A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.38Ohm
Power Dissipation (Maximum) PD 0.27W
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 1.2nC

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