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CHM05N65PAGP MOSFET Transistor

The CHM05N65PAGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM05N65PAGP transistor as follows.

Circuit diagram symbol of the CHM05N65PAGP transistor

CHM05N65PAGP Transistor Specification

Transistor Code CHM05N65PAGP
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.4Ohm
Power Dissipation (Maximum) PD 56W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 10nC

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