CHM02N6GPAGP MOSFET Transistor

The CHM02N6GPAGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM02N6GPAGP transistor as follows.

CHM02N6GPAGP Transistor Specification

Transistor Code		CHM02N6GPAGP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5.5Ohm
Power Dissipation (Maximum)	PD	48W
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		6.7nC

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