CEV2306 MOSFET Transistor

The CEV2306 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEV2306 transistor as follows.

CEV2306 Transistor Specification

Transistor Code		CEV2306
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT323
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	0.4W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7nS

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