CEUF640 MOSFET Transistor

The CEUF640 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEUF640 transistor as follows.

CEUF640 Transistor Specification

Transistor Code		CEUF640
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		355pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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