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CEU830G MOSFET Transistor

The CEU830G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEU830G transistor as follows.

Circuit diagram symbol of the CEU830G transistor

CEU830G Transistor Specification

Transistor Code CEU830G
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 68W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS

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