CEU6060N MOSFET Transistor

The CEU6060N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEU6060N transistor as follows.

CEU6060N Transistor Specification

Transistor Code		CEU6060N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		3nS

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