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CES2362 MOSFET Transistor

The CES2362 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CES2362 transistor as follows.

Circuit diagram symbol of the CES2362 transistor

CES2362 Transistor Specification

Transistor Code CES2362
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT23
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.08Ohm
Power Dissipation (Maximum) PD 1.3W
Drain-Source Capacitance 70pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 3nS

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