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CES2317 MOSFET Transistor

The CES2317 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CES2317 transistor as follows.

Circuit diagram symbol of the CES2317 transistor

CES2317 Transistor Specification

Transistor Code CES2317
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.08Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6nS

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