CES2314 MOSFET Transistor

The CES2314 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CES2314 transistor as follows.

CES2314 Transistor Specification

Transistor Code		CES2314
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		182pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3nS

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