CES2313A MOSFET Transistor

The CES2313A is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CES2313A transistor as follows.

CES2313A Transistor Specification

Transistor Code		CES2313A
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		135pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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