CES2313 MOSFET Transistor

The CES2313 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CES2313 transistor as follows.

CES2313 Transistor Specification

Transistor Code		CES2313
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		130pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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