CEPF634 MOSFET Transistor

The CEPF634 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEPF634 transistor as follows.

CEPF634 Transistor Specification

Transistor Code		CEPF634
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	74W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.5nS

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