CEP6601 MOSFET Transistor

The CEP6601 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEP6601 transistor as follows.

CEP6601 Transistor Specification

Transistor Code		CEP6601
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.086Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		4nS

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