CEP60N10 MOSFET Transistor

The CEP60N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEP60N10 transistor as follows.

CEP60N10 Transistor Specification

Transistor Code		CEP60N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	57A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		440pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5nS

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