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CEP6086L MOSFET Transistor

The CEP6086L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEP6086L transistor as follows.

Circuit diagram symbol of the CEP6086L transistor

CEP6086L Transistor Specification

Transistor Code CEP6086L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 72A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.01Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 235pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 10nS

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