CEP30N3 MOSFET Transistor

The CEP30N3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEP30N3 transistor as follows.

CEP30N3 Transistor Specification

Transistor Code		CEP30N3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	227W
Drain-Source Capacitance		390pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		4V

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