CEP20P10 MOSFET Transistor

The CEP20P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEP20P10 transistor as follows.

CEP20P10 Transistor Specification

Transistor Code		CEP20P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	115W
Drain-Source Capacitance		210pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16nS
Total Gate Charge		30nC

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