CEP10N6 MOSFET Transistor

The CEP10N6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEP10N6 transistor as follows.

CEP10N6 Transistor Specification

Transistor Code		CEP10N6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	166W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		61nS
Total Gate Charge		44nC

UXPython is not the creator or an official representative of the CEP10N6 MOSFET transistor. You can download the official CEP10N6 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

STP40N10 MOSFET Transistor FQP9N50C MOSFET Transistor IRFS630 MOSFET Transistor SPP07N60C3 MOSFET Transistor IRF840A MOSFET Transistor 100N03 MOSFET Transistor SSF7510 MOSFET Transistor AOT20S60L MOSFET Transistor IXTP22N20MA MOSFET Transistor IRL610 MOSFET Transistor STP5NA50 MOSFET Transistor IRC520 MOSFET Transistor IRF9521 MOSFET Transistor IXTP8N50P MOSFET Transistor NDP610A MOSFET Transistor AP3N2R8P MOSFET Transistor FDP150N10A_F102 MOSFET Transistor IRFS731 MOSFET Transistor IRL621 MOSFET Transistor FQP44N10 MOSFET Transistor