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CEP06N7 MOSFET Transistor

The CEP06N7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEP06N7 transistor as follows.

Circuit diagram symbol of the CEP06N7 transistor

CEP06N7 Transistor Specification

Transistor Code CEP06N7
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 2Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 110pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 73nS
Total Gate Charge 29nC

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