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CEP05N8 MOSFET Transistor

The CEP05N8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEP05N8 transistor as follows.

Circuit diagram symbol of the CEP05N8 transistor

CEP05N8 Transistor Specification

Transistor Code CEP05N8
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.9Ohm
Power Dissipation (Maximum) PD 139W
Drain-Source Capacitance 105pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 71nS
Gate-Threshold Voltage (Maximum) 4V

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