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CEP02N6G MOSFET Transistor

The CEP02N6G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEP02N6G transistor as follows.

Circuit diagram symbol of the CEP02N6G transistor

CEP02N6G Transistor Specification

Transistor Code CEP02N6G
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 5Ohm
Power Dissipation (Maximum) PD 60W
Drain-Source Capacitance 70pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS

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