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CEM6607 MOSFET Transistor

The CEM6607 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEM6607 transistor as follows.

Circuit diagram symbol of the CEM6607 transistor

CEM6607 Transistor Specification

Transistor Code CEM6607
Transistor Type MOSFET
Control Channel Type P-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.086Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4nS

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