CEM3317 MOSFET Transistor

The CEM3317 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEM3317 transistor as follows.

CEM3317 Transistor Specification

Transistor Code		CEM3317
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.9(6.2)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		250(155)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6(4)nS

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