CEM3109 MOSFET Transistor

The CEM3109 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEM3109 transistor as follows.

CEM3109 Transistor Specification

Transistor Code		CEM3109
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10(8)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014(0.02)Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		170(255)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS

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