CEK01N6G MOSFET Transistor

The CEK01N6G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEK01N6G transistor as follows.

CEK01N6G Transistor Specification

Transistor Code		CEK01N6G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	9.3Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		55pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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