CEH2313 MOSFET Transistor

The CEH2313 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEH2313 transistor as follows.

CEH2313 Transistor Specification

Transistor Code		CEH2313
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		130pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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