CEH2305 MOSFET Transistor

The CEH2305 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEH2305 transistor as follows.

CEH2305 Transistor Specification

Transistor Code		CEH2305
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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