CEF12N6 MOSFET Transistor

The CEF12N6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEF12N6 transistor as follows.

CEF12N6 Transistor Specification

Transistor Code		CEF12N6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.65Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		58nS
Total Gate Charge		66nC

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