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CEDM7001E MOSFET Transistor

The CEDM7001E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEDM7001E transistor as follows.

Circuit diagram symbol of the CEDM7001E transistor

CEDM7001E Transistor Specification

Transistor Code CEDM7001E
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-883L
Transistor SMD Code E
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 0.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 2Ohm
Power Dissipation (Maximum) PD 0.1W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 0.9V

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