CEDF640 MOSFET Transistor

The CEDF640 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEDF640 transistor as follows.

CEDF640 Transistor Specification

Transistor Code		CEDF640
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		355pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Total Gate Charge		47nC

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