CED6060N MOSFET Transistor

The CED6060N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CED6060N transistor as follows.

CED6060N Transistor Specification

Transistor Code		CED6060N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		3nS
Total Gate Charge		28.7nC

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