CED55N10 MOSFET Transistor

The CED55N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CED55N10 transistor as follows.

CED55N10 Transistor Specification

Transistor Code		CED55N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	83.3W
Drain-Source Capacitance		240pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		9nS
Total Gate Charge		84nC

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