CED30P10 MOSFET Transistor

The CED30P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CED30P10 transistor as follows.

CED30P10 Transistor Specification

Transistor Code		CED30P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.076Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		345pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Total Gate Charge		78nC

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