CED20P10 MOSFET Transistor

The CED20P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CED20P10 transistor as follows.

CED20P10 Transistor Specification

Transistor Code		CED20P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		210pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16nS
Total Gate Charge		30nC

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