CED16N10L MOSFET Transistor

The CED16N10L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CED16N10L transistor as follows.

CED16N10L Transistor Specification

Transistor Code		CED16N10L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.115Ohm
Power Dissipation (Maximum)	PD	43W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		2.7nS

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