CED12P10 MOSFET Transistor

The CED12P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CED12P10 transistor as follows.

CED12P10 Transistor Specification

Transistor Code		CED12P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.315Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS

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