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CED12N10L MOSFET Transistor

The CED12N10L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CED12N10L transistor as follows.

Circuit diagram symbol of the CED12N10L transistor

CED12N10L Transistor Specification

Transistor Code CED12N10L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.175Ohm
Power Dissipation (Maximum) PD 43W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 4nS

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