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CED04N7G MOSFET Transistor

The CED04N7G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CED04N7G transistor as follows.

Circuit diagram symbol of the CED04N7G transistor

CED04N7G Transistor Specification

Transistor Code CED04N7G
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.3Ohm
Power Dissipation (Maximum) PD 56W
Drain-Source Capacitance 80pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS

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