CED01N7 MOSFET Transistor

The CED01N7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CED01N7 transistor as follows.

CED01N7 Transistor Specification

Transistor Code		CED01N7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	700V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	18Ohm
Power Dissipation (Maximum)	PD	31W
Drain-Source Capacitance		45pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS

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