CEB9060N MOSFET Transistor

The CEB9060N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB9060N transistor as follows.

CEB9060N Transistor Specification

Transistor Code		CEB9060N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0105Ohm
Power Dissipation (Maximum)	PD	166W
Drain-Source Capacitance		765pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		11.9nS
Total Gate Charge		68.1nC

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