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CEB85N75 MOSFET Transistor

The CEB85N75 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB85N75 transistor as follows.

Circuit diagram symbol of the CEB85N75 transistor

CEB85N75 Transistor Specification

Transistor Code CEB85N75
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 86A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.012Ohm
Power Dissipation (Maximum) PD 200W
Drain-Source Capacitance 715pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 9nS
Total Gate Charge 90nC

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