CEB85A3 MOSFET Transistor

The CEB85A3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB85A3 transistor as follows.

CEB85A3 Transistor Specification

Transistor Code		CEB85A3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	89W
Drain-Source Capacitance		335pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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