CEB840L MOSFET Transistor

The CEB840L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB840L transistor as follows.

CEB840L Transistor Specification

Transistor Code		CEB840L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		145pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Total Gate Charge		33nC

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