CEB83A3 MOSFET Transistor

The CEB83A3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB83A3 transistor as follows.

CEB83A3 Transistor Specification

Transistor Code		CEB83A3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0053Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		980pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		22nS
Total Gate Charge		53nC

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